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| (R) STPS20120C POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM Tj (max) VF (typ) FEATURES AND BENEFITS 2 x 10 A 120 V 175C 0.54 V K A1 K A2 High junction temperature capability Avalanche rated Low leakage current Good trade-off between leakage current and forward voltage drop A1 K A2 K A1 A2 DESCRIPTION Dual center tap Schottky rectifier suited for high frequency Switch Mode Power Supply. Packaged in TO-220AB & I2PAK, this device is intended to be used in notebook & LCD adaptors, desktop SMPS, providing in these applications a margin between the remaining voltages applied on the diode and the voltage capability of the diode. TO-220AB STPS20120CT I2PAK STPS20120CR Table 2: Order Codes Part Number STPS20120CT STPS20120CR Marking STPS20120CT STPS20120CR Table 3: Absolute Ratings (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward voltage Average forward current = 0.5 Tc = 150C Per diode Per device Value 120 30 10 20 150 4600 -65 to + 175 175 Unit V A A A W C C Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range tp = 10ms sinusoidal tp = 1s Tj = 25C Maximum operating junction temperature * 1 dPtot * : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink dTj Rth ( j - a ) February 2005 REV. 1 1/6 STPS20120C Table 4: Thermal Parameters Symbol Rth(j-c) Rth(c) Junction to case Coupling Parameter Per diode Total Total Value 3 1.8 0.6 Unit C/W C/W When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) Table 5: Static Electrical Characteristics (per diode) Symbol IR * Tests conditions Tj = 25C VR = VRRM Reverse leakage current Tj = 125C Tj = 25C Tj = 125C VF ** Forward voltage drop Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% Parameter Min. Typ 1.5 0.54 0.7 0.81 Max. 10 5 0.7 0.58 0.92 0.74 1.02 0.86 Unit A mA IF = 2.5A IF = 10A IF = 20A V To evaluate the conduction losses use the following equation: P = 0.62 x IF(AV) + 0.012 IF (RMS) 2 Figure 1: Average forward power dissipation versus average forward current (per diode) PF(AV)(W) 10 9 8 7 6 5 Figure 2: Average forward current versus ambient temperature ( = 0.5, per diode) IF(AV)(A) 11 = 0.05 = 0.1 = 0.2 = 0.5 Rth(j-a)=Rth(j-c) 10 9 =1 8 7 Rth(j-a)=15C/W 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 4 T 3 2 T IF(AV)(A) =tp/T 10 11 12 tp 13 1 0 0 =tp/T 25 tp 50 Tamb(C) 75 100 125 150 175 2/6 STPS20120C Figure 3: Normalized avalanche derating versus pulse duration PARM(tp) PARM(1s) 1 1.2 1 0.1 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1 power Figure 4: Normalized avalanche derating versus junction temperature PARM(tp) PARM(25C) power 0.01 tp(s) 10 100 1000 Tj(C) 0 25 50 75 100 125 150 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) IM(A) 140 120 100 80 60 40 IM Figure 6: Relative variation of thermal impedance junction to ambient versus pulse duration Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 = 0.5 Tc=25C 0.5 Tc=75C 0.4 0.3 = 0.2 = 0.1 Single pulse T Tc=125C t 0.2 0.1 0.0 20 0 1.E-03 =0.5 t(s) 1.E-02 1.E-01 1.E+00 tp(s) 1.E-02 1.E-01 =tp/T tp 1.E+00 1.E-03 Figure 7: Reverse leakage current versus reverse voltage applied (typical values, per diode) IR(mA) 1.E+01 Tj=150C Figure 8: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25C 1.E+00 Tj=125C 1.E-01 Tj=100C Tj=75C 1.E-02 Tj=50C 100 1.E-03 Tj=25C 1.E-04 VR(V) 1.E-05 0 10 20 30 40 50 60 70 80 90 100 110 120 VR(V) 10 1 10 100 3/6 STPS20120C Figure 9: Forward voltage drop versus forward current (per diode) IFM(A) 100 Tj=125C (maximum values) Tj=125C (typical values) Tj=25C (maximum values) 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Figure 10: TO-220AB Package Mechanical Data DIMENSIONS REF. A H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 13 2.65 15.25 6.20 3.50 3.75 Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 14 2.95 15.75 6.60 3.93 3.85 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 0.551 0.116 0.620 0.259 0.154 0.151 C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 0.645 typ. 2.6 typ. 0.102 typ. 4/6 STPS20120C Figure 11: I2PAK Package Mechanical Data DIMENSIONS REF. A E L2 c2 Millimeters Min. Max. 4.60 2.69 0.93 1.70 1.70 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.067 0.067 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 A A1 b b1 D b2 c c2 A1 L1 b2 L b1 b e D e E c L L1 L2 Table 6: Ordering Information Ordering type STPS20120CT STPS20120CR Marking STPS20120CT STPS20120CR Package TO-220AB I2PAK Weight 2.23 g 1.49 g Base qty 50 50 Delivery mode Tube Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 m.N. Maximum torque value: 1.0 m.N. Table 7: Revision History Date 18-Feb-2005 Revision 1 First issue. Description of Changes 5/6 STPS20120C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6 |
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